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An improved match line (ML) sensing scheme for ternary content addressable memory (TCAM) is presented in this paper. Selective precharge combined with charge sharing technique reduces ML search energy consumption. Use of lower Vt transistors in the sense amplifier allows further reduction of energy. Series gating transistor eliminates energy consumption associated with increased leakage of lower V...
A new match line sensing scheme for ternary content addressable memory (TCAM) is presented in this paper. Selective precharge is combined with charge sharing technique to reduce the match line (ML) energy consumption. Simulation performed using 130nm 1.2V CMOS logic shows minimum ∼35% dynamic energy reduction compared to current race (CR) scheme. The technique also achieves ∼41% speed improvement...
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