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The performances of InGaN Schottky photodetectors with varied fabrication processes were investigated. The photoresponse and dark current of InGaN Schottky photodetectors can be obviously improved by inserting a thin Si3N4 passivation layer between the InGaN layer and the Schottky metal. Furthermore, a mesa process gives not only a further increase in the photoresponse but also a pronounced reduction...
Experimental and modeling studies concerning the etching of InP by chlorine plasma have been achieved. Chlorine plasma discharge has been analyzed using Langmuir probe. The latter allows to measure the electron density and temperature as a function of ICP reactor parameters such as RF power, chlorine flow rate and pressure. These two parameters play a crucial role in the modeling of plasma etch process...
Several structures produced by dry etching of InP substrates are studied. RIE (Reactive Ion Etching) and ICP (Inductively Coupled Plasma) dry etching procedures were compared. The characterization was carried out by spectrum imaging Cathodoluminescence (CL). The main changes induced by both procedures in the InP substrates were studied. In particular, the creation of defects and the generation of...
InP wafers after etching in an ICP (Inductively-Coupled Plasma) reactor with different kinds of reactant gases have been carefully studied using surface sensitive techniques, in order to gain insight into the mechanisms that control the process. Two types of reactive gas systems have been investigated, namely Cl2/CH4/Ar mixtures on one side, and CH4/H2 on the other. In both cases, the composition...
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