The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
For investigations of the defect spectra of CuInSe 2 epitaxial thin films are grown on GaAs (001) wafers using metal organic vapor phase epitaxy. The photoluminescence spectra for p-type Cu-rich ([Cu]/[In]>1.05) CuInSe 2 are dominated by one donor acceptor pair transition at 0.972 eV. For slightly Cu-poor and stoichiometric samples a free to bound transition at 0.992 eV is observed...
Optical and electrical properties of CuGaSe2/GaAs(001) heteroepitaxial layers as a function of chemical composition are presented. The photoluminescence (PL) spectra observed for Cu-rich epitaxial layers are interpreted in a model consisting of one donor and two acceptor levels with ionization energies of 80, 50 and 10 meV, respectively. The radiative recombination of Ga-rich samples is dominated...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.