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We used Cu contact metallization to solve one of the critical challenges for 22 nm node technology. Cu contact metallization allowed us to demonstrate world's smallest and fully functional 22 nm node 6T-SRAM . Cu contact metallization was executed using CVD Ru-containing liner. We obtained early reliability data by thermally stressing bulk device. Bulk device parameters such as junction and gate leakage...
We demonstrate 22 nm node technology compatible, fully functional 0.1 mum2 6T-SRAM cell using high-NA immersion lithography and state-of-the-art 300 mm tooling. The cell exhibits a static noise margin (SNM) of 220 mV at Vdd=0.9 V. We also present a 0.09 mum2 cell with SNM of 160 mV at Vdd=0.9 V demonstrating the scalability of the design with the same layout. This is the world's smallest 6T-SRAM cell...
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