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The composition of MBE-grown GaAs1?xSbx (x<0.15) is investigated as a function of growth temperature for constant As and Sb flux and as a function of Sb effusion cell temperature for a fixed growth temperature. Under conditions of constant As and Sb flux, x remains fairly constant for growth temperatures of 480?540?C, but decreases rapidly with increasing temperature in the range 540?640?C. As...
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