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We report on the elimination of collapse of drain I/V characteristics in modulation-doped field-effect transistors at 77 K by replacing the doped AlGaAs with a thin GaAs/AlGaAs superlattice where only the GaAs is doped. Such thin barriers (10 ?/15 ?) are transparent to the electrons making the electron transfer into the bulk GaAs (undoped) possible. Room-temperature transconductances of 180 mS/mm...
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