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The sensitivity of carrier concentration and mobility of Al0.25Ga0.75As/GaAs modulation-doped structures to light exposure has been studied. The light sensitivity of both parameters was found to be strongly dependent on the growth temperature of the Al0.25Ga0.75As which was varied between 580?C and 695?C. A growth temperature of about 610?C was observed to produce the least light sensitivity, while...
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