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High-performance normally-off and normally-on field-effect transistors have been fabricated from modulation-doped (Al,Ga)As/GaAs heterostructures grown by molecular-beam epitaxy. At 300 K, transconductances of 210 and 240 mS/mm were obtained, respectively, for normally-off and normally-on transistors with a 1 ?m gate length. The mode of operation was determined by the depth to which the gate was recessed...
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