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Maskless laser dry etching of monolithically integrated InP microlenses for infraredoptical coupling between optoelectronic devices and aglass fiber at 1.53m wavelength is reported. The process is based on the projection of aconventional chromium-on-quartz reticle on to the InP wafer surface using apulsed 248nm KrF excimer laser. Etching proceeds with afluence-dependent rate in achlorine atmosphere...
Abstract.A laser induced etch process is described which uses a pulsed 248nm KrF excimer laser and Cl2 atmosphere for the fabrication of monolithic continuously curved reliefs in InP substrate. In a bakeable processing chamber with low base pressure a wide range of laser fluences is available for damage-free etching. Especially, by photothermal heating far above the melting point, mirrorlike smooth...
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