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In this paper we demonstrate functional 3D circuits obtained by a 3D Stacked IC approach using both Cu Through Silicon Vias (TSV) First and cost effective solution Die-to-Wafer Hybrid Collective bonding. The Cu TSV-First process is inserted between contact and M1. The top die is thinned down to 25 ??m and bonded to the landing wafer by Hybrid Bonding. Measurements and simulations of the power delay...
In this paper we demonstrate functional 3D circuits obtained by a 3D Stacked IC approach using Die-to-Wafer Hybrid Collective bonding with Cu Through Silicon Vias (TSV). The Cu TSV process is inserted between contact and M1 of our reference 130 nm CMOS process on 200 mm wafers. The top die is thinned down to 25 mum and bonded to the landing wafer by a combination of polymer bonding and copper to copper...
The time and temperature dependence of Stress-Induced-Voiding below and in copper VIA's with a diameter of 80 nm integrated in a k = 2.5 material was studied. The focus was on the early phase of the voiding process. To accelerate the degradation, test structures with big metal plates below and/or above the VIA were used. We found two degradation mechanisms in which one dominated below and the other...
Single damascene (SD) Cu/Aurorareg ULK interconnects with a minimum spacing of 50nm are achieved by using a metal hard mask (MHM) integration scheme, which enables to perform the resist ash before dielectric etch. This patterning scheme is used in combination with a low damage etch technique based on sidewall protection. Interconnect performance and reliability can be further improved by using Aurora...
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