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In situ synchrotron X-ray scattering and fluorescence techniques were used to simultaneously observe the evolution of the strain and composition of a growing crystal surface in real time. Control of the X-ray incidence angle allows us to obtain high surface sensitivity. We studied metal organic chemical vapor deposition (MOCVD) of epitaxial PbZr x Ti 1−x O 3 (PZT) onto SrTiO...
The stoichiometry and hydrogen content of hot-wire (HW)-grown silicon nitride was examined as a function of SiH 4 /NH 3 flow ratio. The effect of post-deposition hydrogenation treatment on overall film hydrogen content was determined. The hydrogen release properties in Si-rich and N-rich nitride layers were characterized by annealing treatments. Defect hydrogenation was studied using...
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