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In this work, pulsed micro-discharges produced by dielectric barrier discharges (DBDs) with a sub-millimeter gap were electrically-characterized under ac voltage at 100 Hz and at 5 kHz. Ozone production was investigated for different discharge gap lengths and pressures. The aim of the work was to understand the statistics of filamentary current pulses and their relationship to the reduced electric...
Alkali rf-discharge lamps provide the light for optical pumping in vapor-cell atomic clocks and magnetometers. Traditionally, the discharge lamp's envelope has been fabricated from alkali-resistant Corning 1720 aluminosilicate glass, and such lamps have demonstrated decade-long continuous operation. Specifically, the diffusion of alkali atoms into this glass during lamp operation has been shown to...
A novel manufacturable integration of Si Schottky contact/diode using the standard W-contact process (instead of the standard silicide process) is demonstrated. Up to 4× smaller junction area is enabled. Schottky barrier diode with the novel integration shows the potential to replace the bipolar junction transistor/p-n diodes for low-voltage/low-power system-on-a-chip and memory applications...
This paper summarizes our recent investigations of nano-wire n type tunneling field effect transistor (n-TFET) reliability by experimental measurements and physical analysis [1-3]. Large PBTI and HC degradations which are very different from those in conventional n-MOSFETs were observed. The results are interpreted by different degradation mechanism in TFET.
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