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An all-optical random-access memory with an ultralow power consumption of 30 nW was achieved by using a photonic crystal nanocavity. Integrated o-RAM chip operation for 4-bit, 40-Gb/s signal was also demonstrated for the first time.
We have investigated bistability of a DBR laser using side-mode injection. Flip-flop operation is demonstrated with low input switching power. The threshold switching power is reduced significantly by decreasing the wavelength detuning from the side-mode. Thus, an optical memory based on a DBR laser can be easily addressed by controlling the input signal wavelength.
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