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Based on the burning mechanism of the device, novel clipper circuit is introduced to the design of LNA. The clipping diodes were placed in parallel with the gate of transistor, and absorbed into the input matching circuit of LNA. Finally, the influence of the characteristic impedance of series microstrip in input matching circuit on the anti-burnout performance of LNA is discussed. The results of...
A 32 nm logic technology for high performance microprocessors is described. 2nd generation high-k + metal gate transistors provide record drive currents at the tightest gate pitch reported for any 32 nm or 28 nm logic technology. NMOS drive currents are 1.62 mA/um Idsat and 0.231 mA/um Idlin at 1.0 V and 100 nA/um Ioff. PMOS drive currents are 1.37 mA/um Idsat and 0.240 mA/um Idlin at 1.0 V and 100...
A leading edge 45 nm CMOS system-on-chip (SOC) technology using Hafnium-based high-k/metal gate transistors has been optimized for low power products. PMOS/NMOS logic transistor drive currents of 0.86/1.08 mA/um, respectively, have been achieved at 1.1 V and off-state leakage of 1 nA/um. Record RF performance for a mainstream 45 nm bulk CMOS technology has been achieved with measured fT/fMAX values...
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