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Giant magnetostrictive material is a kind of new function materials, which have the features of big magnetostriction strain, rapid responsibility and low frequency. So they are widely used in the fields of high technologies, such as sonar system, underwater acoustic transducers, electroacoustic transducer, etc [1, 2]. One of the typical representations of this kind of materials is TbFe2, which exhibits...
A 32 nm logic technology for high performance microprocessors is described. 2nd generation high-k + metal gate transistors provide record drive currents at the tightest gate pitch reported for any 32 nm or 28 nm logic technology. NMOS drive currents are 1.62 mA/um Idsat and 0.231 mA/um Idlin at 1.0 V and 100 nA/um Ioff. PMOS drive currents are 1.37 mA/um Idsat and 0.240 mA/um Idlin at 1.0 V and 100...
Interconnect process features are described for a 32 nm high performance logic technology. Lower-k, yet highly manufacturable, carbon-doped oxide (CDO) dielectric layers are introduced on this technology at three layers to address the demand for ever lower metal line capacitance. The pitches have been aggressively scaled to meet the expectation for density, and the metal resistance and electromigration...
A leading edge 45 nm CMOS system-on-chip (SOC) technology using Hafnium-based high-k/metal gate transistors has been optimized for low power products. PMOS/NMOS logic transistor drive currents of 0.86/1.08 mA/um, respectively, have been achieved at 1.1 V and off-state leakage of 1 nA/um. Record RF performance for a mainstream 45 nm bulk CMOS technology has been achieved with measured fT/fMAX values...
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