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In this talk, I will discuss two applications of nonlinear quantum photonics in silicon nanowires: correlated photon pair sources and a single-photon wavelength converter. Correlated photon pairs can be generated in a nonlinear silicon waveguide through the spontaneous four-wave mixing (SFWM) process shown in Fig. 1(a), where two photons from a bright pump laser are annihilated, and a two photons...
The paper discusses current challenges and advantages of multi-level signaling for high-speed serial links, showing the differences and similarities in link-path analysis between binary and multi-level signaling. Comparison of two signaling methodologies is given from the general theory viewpoint, as well as on the basis of various tests regarding crosstalk, jitter, equalizations and different channel...
We demonstrate heralded single photon source on a silicon photonic chip by a pump interleaving technique. We have achieved 90±5% enhancement to single photon rate with only 14±2% reduction in quantum signal to noise ratio.
As the development of ultra-large scale integrated devices, control of nanoscale structure, thermal and chemical stability and uniformity at the thin films plays a key role in applications of the fields as ohmic contact, Schottky barrier, interconnect and electrode [1]. Cobalt exhibits high spin polarization of carriers at the Fermi level, low electrical resistivity and small lattice mismatch with...
The quality and the reliability of the electrical interconnection have a direct impact on the performance of the MEMS/NEMS devices. In this work, reliable electric interconnection for MEMS/NEMS devices was realized by Au/a-Si (amorphous Si) eutectic reaction in the anodic wafer bonding process. In order to evaluate the qualities of the anodic bonded contact, the electrical property of the Au/a-Si...
A leading edge 45 nm CMOS system-on-chip (SOC) technology using Hafnium-based high-k/metal gate transistors has been optimized for low power products. PMOS/NMOS logic transistor drive currents of 0.86/1.08 mA/um, respectively, have been achieved at 1.1 V and off-state leakage of 1 nA/um. Record RF performance for a mainstream 45 nm bulk CMOS technology has been achieved with measured fT/fMAX values...
A 45 nm logic technology is described that for the first time incorporates high-k + metal gate transistors in a high volume manufacturing process. The transistors feature 1.0 nm EOT high-k gate dielectric, dual band edge workfunction metal gates and third generation strained silicon, resulting in the highest drive currents yet reported for NMOS and PMOS. The technology also features trench contact...
Benzocyclobutene (BCB) based intracortical neural implants for basic neuroscience research in animal models was fabricated, in which microfluidic channel was embedded to deliver chemical reagents. BCB presents several attractive features for chronic applications: flexibility, biocompatibility, desirable chemical and electrical properties, and can be easily manufactured using existing batch microfabrication...
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