The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents results of statistical analysis of RTN in highly scaled HKMG FETs. A robust algorithm to extract multiple-trap RTN is proposed and applied to show that RTN can cause serious variation even when HKMG and undoped channel are introduced. We further focus on hysteretic behavior caused by RTN with time constants much longer than the circuit timescale. This reveals that RTN also induces...
This paper analyzes the extensive variability of random telegraph noise (RTN) responses to gate voltage and temperature in undoped nanoscale nFETs. Using comprehensive RTN measurements to extract the response parameters of >600 traps, we show that the RTN can induce delay uncertainty in dense low power (i.e., narrow devices and low VDD) 14-nm technology that may exceed 50% of the nominal delay.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.