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Two parameters - the distribution of failure times and the voltage dependence of defect generation - define IC lifetime limited by time-dependent dielectric breakdown (TDDB). While the physics of both parameters for uniformly stressed thin-gate dielectric are well known, we find that the corresponding parameters for asymmetric off-state TDDB are anomalous and cannot be understood by a simple application...
The mechanism of stress induced leakage current and dielectric breakdown is examined through 1/f noise in the tunneling current of 1.7-5 nm oxides. Before breakdown occurs, we find a linear relationship between low frequency 1/f noise and the increased current due to stress. This behavior can be described by a model of trap assisted tunneling for both phenomena. We develop a quantitative new model...
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