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We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been introduced for multiple critical levels for the first time. Dual strained channels have been also implemented to enhance mobility for high performance applications.
Tungsten-based full metal gate (FMG) stacks that are equivalent to or better than metal-inserted poly-Si (MIPS) stack have been developed. These fully encapsulated FMG stacks enable borderless source/drain contacts needed for the 14 nm technology node and beyond, where the contacted gate pitch is expected to be less than 80 nm. Tungsten replaces gate salicidation with the sheet resistance ≤ 14 Ω/□...
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