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Gate-all-around (GAA) transistors use multiple parallel nanowires to achieve the desired ON current. The fabrication and performance of GAA transistors have been reported, however, a fundamental consideration, namely, the scaling and variability of transistor performance as a function of the number of parallel NWs is yet to be discussed. In this paper, we (i) examine how the overall performance matrix...
In a recent article, the author discussed the growing importance of process-related variability and stress-induced reliability in electronic devices and how it complicates the design of complex IC predicated on transistors of identical characteristics. Various circuit techniques developed to address these variability and reliability issues were also discussed. In this article, I continue the discussion...
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