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We study experimentally and theoretically the microdose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We found experimentally that cumulative increase of leakage current occurs by means of stochastic spikes corresponding to a strike of single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model...
We study experimentally and theoretically the microdose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We have found experimentally that cumulative increase of leakage drain current occurs by means of stochastic steps corresponding to strike of a single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic...
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