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The study of scanning tunneling microscopy (STM) induced localized degradation and polarity dependent breakdown (BD) of HfO2/SiOx dielectric stacks is presented in this work, together with a correlated investigation of the BD locations by transmission electron microscopy (TEM). The localized dielectric BD events are also analysed using conductive-atomic force microscopy. The analysis of the degradation...
Grain boundaries (GBs) in polycrystalline high-κ (HK) dielectric materials affect the electrical performance and reliability of advanced HK-based metal-oxide-semiconductor (MOS) devices. In this work, we present a localized study comparing the electrical conduction through grains and GBs for CeO2 and HfO2-based HK dielectrics using scanning tunneling microscopy (STM) and transmission electron microscopy...
In this work, we use scanning tunneling microscopy (STM) to study the localized degradation, breakdown and post-breakdown of a high-κ (HK) gate dielectric material, cerium oxide (CeO2) deposited directly on a silicon substrate. The novelty of the study lies in analyzing the breakdown phenomenon from a macroscopic metal-oxide-semiconductor (MOS) capacitor level to a very localized nanoscale breakdown...
Dielectric breakdown in advanced gate stacks in state-of-the-art Si nanoelectronic devices has been one of the key front-end reliability concerns for further CMOS technology downscaling. In this paper, we present the latest findings in using physical analysis techniques such as transmission electron microscopy (TEM)/electron energy loss spectroscopy (EELS)/energy dispersive X-ray spectroscopy (EDS),...
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