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Surface undulations induced by interfacial misfit dislocations in the Ge/Si(111) films grown by conventional molecular beam epitaxy and by surfactant-mediated epitaxy with Bi as a surfactant have been analyzed using scanning tunnelling microscopy and elasticity theory. A comparison of the experimentally measured undulation patterns with patterns calculated with elasticity theory leads to identification...
We show that two-dimensional Si/Ge nanostructures can be imaged with chemical sensitivity on the nanometer scale using a scanning tunneling microscope (STM). Using an atomic layer of Bi terminating the surface, we can distinguish between Si and Ge. The apparent height measured by the STM is ~0.09 nm higher at areas consisting of Ge than on areas consisting of Si. This distinction between Si and Ge...
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