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Nanocrystalline gallium nitride (GaN) was prepared via one simple route by the reaction of metallic magnesium powders with gallium sesquioxide (Ga 2 O 3 ) and ammonium chloride (NH 4 Cl) in an autoclave at 650°C. X-ray powder diffraction (XRD) pattern indicated that the product was hexagonal GaN, and the cell constant was (a=3.18962Å, c=5.18674Å). Scanning electron microscopy...
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