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Recently, Phase-change RAMs (PRAMs) are considered to be as a good candidate that can substitute as DRAM cache buffers (CBs) in NAND flash-based storage devices (NFSDs). PRAM is an adequate device to mobile consumer electronics thanks to low static power consumption, high density and non-volatility. However, in spite of many advantages over DRAM, asymmetric write/read speed of PRAM causes performance...
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