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The epitaxial growth and the structure of Cu on Si(111)7 × 7 deposited at high temperature (< 300–600°C) was investigated mainly by medium energy ion scattering (MEIS) and scanning tunneling microscopy (STM). The domain images whose periodicity is about 5.5 ± 0.2 times of the Si bulk unit were observed at high sample bias (VS = 2.5 V). The periodicity coincides with the ‘5 × 5’ incommensurate structure...
The epitaxial growth and the structure of Cu on Si(111)7 × 7 deposited at high temperature (< 300–600°C) was investigated mainly by medium energy ion scattering (MEIS) and scanning tunneling microscopy (STM). The domain images whose periodicity is about 5.5 ± 0.2 times of the Si bulk unit were observed at high sample bias (VS = 2.5 V). The periodicity coincides with the ‘5 × 5’ incommensurate structure...
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