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We describe efforts to epitaxially integrate GaAs with Si, using thin, relaxed Ge layers. The Ge films are deposited by molecular beam epitaxy using a self-assembled, selective-area growth technique, where atomic Ge etches an SiO 2 mask layer and then grows from pores extending to the Si substrate. The resulting Ge film coalesces over the SiO 2 mask and is planarized, using H 2...
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