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Wide band gap power semiconductor devices are now replacing the Si-MOSFET or IGBT. GaN-HEMT achieves the reduction in size and weight, thanks to its high frequency switching behavior. However, its high-speed switching characteristics and low threshold voltage may cause a false turn-on phenomenon, which is a fatal effect for the applications. It is urgent issue to tackle and avoid this problem by modifying...
In this paper, an analytical expression for the DC bus harmonics on the input capacitor, caused by a three phase pulse width modulation (PWM) inverter of a high speed motor drive system, is derived. As the result, we found that the parasitic line inductance between the battery and the input capacitor, and the input capacitor are indirectly proportional. We can achieve the calculation method of the...
Wireless Power transfer using electric field can realize highly efficient electrical power transmission and the transmission units are thin and light. However, the transmission system produces large electric field intensity and the electric field noise can make other electronic devices malfunction. A shield box is greatly effective to reduce the electric intensity 60dB without a decline of transmission...
This paper describes mid-range electrical resonance wireless power transfer in kHz range. Wireless power transfer using electrical field is minor since this method is understood only for close-range applications. However, our experimental units, the resonance frequency of which is 85 kHz, achieved 180 mm distance power transmission by vector network analyzer (VNA) measurement while keeping peak efficiency...
A novel drive circuit suitable for next generation semiconductor, GaN-FET (Gallium Nitride Field Effect Transistor), have been proposed and discussed in this paper. Drive loss is also analyzed on respective methods. Furthermore, the problem which is loss increase one of body diode in GaN-FET has been pointed out, and a novel active discharged type gate drive circuit suitable for GaN-FET is proposed...
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