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SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are examined as stacked-type dielectric capacitors for realizing excellent electric stability in capacitor device. It is revealed that the leakage current of the SBTi and CBTi is composed mainly from Schottky current for medium electric field range (about 100–350 kV/cm). The current is smaller...
SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are prepared on Pt film for constructing stacked-type dielectric capacitors. Compared to perovskite barium titanate family of (Ba,Sr)TiO3 (BST) case, it is observed that the SBTi film keeps a low leakage of 10−7 A/cm2 at 250 kV/cm, which is smaller by an order of magnitude than the BST film,...
SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are prepared on Pt film for constructing stacked-type dielectric capacitors. Compared to perovskite barium titanate family of (Ba,Sr)TiO3 (BST) case, it is observed that the SBTi film keeps a low leakage of 10−7 A/cm2 at 250 kV/cm and smaller by an order of magnitude than the BST film, even with...
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