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This paper reports on the first implementation of low voltage complementary logic (?? 1.5 V) by using body-biased aluminum nitride (AlN) piezoelectric MEMS switches. For the first time, by using opposite body biases the same mechanical switch has been made to operate as both an n-type and p-type (complementary) device. Body-biasing also gives the ability to precisely tune the threshold voltage of...
This paper reports the first implementation of ultra thin (100 nm) aluminum nitride (AlN) piezoelectric layers for the fabrication of vertically deflecting nano-actuators. An average piezoelectric coefficient (d31~ - 1.9 pC/N) that is comparable to its microscale counterpart has been demonstrated in nanoscale thin AlN films. Vertical deflections as large as 40 nm have been obtained in 18 mum long...
This paper reports experimental results on a new class of single-chip multi-frequency channel-select filters based on self-coupled aluminum nitride (AlN) contour-mode piezoelectric resonators. For the first time, two-port AlN contour- mode resonators are connected in series and electrically coupled using their intrinsic capacitance to form multi-frequency (94 -271 MHz), narrow bandwidth (~ .3%), low...
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