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High quality InAlN/GaN heterostructures are successfully grown on the (0001) sapphire substrate by pulsed metal organic chemical vapor deposition. The InAlN barrier layer with an indium composition of 17% is observed to be nearly lattice matched to GaN layer, and a smooth surface morphology can be obtained with root mean square roughness of 0.3nm and without indium droplets and phase separation. The...
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