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Wet chemical screening reveals the very high reactivity of Mo(NMe2)4 with H2S for the low‐temperature synthesis of MoS2. This observation motivated an investigation of Mo(NMe2)4 as a volatile precursor for the atomic layer deposition (ALD) of MoS2 thin films. Herein we report that Mo(NMe2)4 enables MoS2 film growth at record low temperatures—as low as 60 °C. The as‐deposited films are amorphous but...
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