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Si-C-N films were deposited on p-type Si(100) substrates by dc magnetron co-sputtering of silicon and carbon using a single sputter target with variable Si/C area ratios in nitrogen-argon mixtures. The film characteristics were primarily controlled by the argon concentration (0-75%) in the gas mixture at a fixed 40% silicon fraction in the magnetron erosion track area. The total pressure and the discharge...
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