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Thermal decomposition of silicon carbide (SiC) is frequently used for the formation of graphene on semi‐insulating substrates, but the growth mechanism is not well understood and thus the method to form monolayer graphene with larger domain size especially on step‐free or wide terrace surfaces is not known. In this work, various stages of graphene growth on SiC (0001) during annealing at 1‐atm‐Ar...
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