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For high‐definition microdisplays with more than several thousands of pixels per inch (ppi), c‐axis‐aligned crystal indium‐gallium‐zinc oxide (CAAC‐IGZO) field‐effect transistors (FETs) are effective devices. Based on such a viewpoint, we have fabricated a 5291‐ppi organic light‐emitting diode (OLED) display using CAAC‐IGZO FETs with a channel length of 60 nm.
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