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Ta2O5 films of 200 nm thick with and without octadecyltrichlorosilane (OTS) surface modification were prepared and used as gate dielectrics to fabricate pentacene metal–insulator–semiconductor (MIS) capacitors. The dielectric constants of Ta2O5 film and OTS-treated Ta2O5 film were determined to be 20.6 and 19.3 at 1 MHz, and both the films exhibit good permittivity stability and low leakage characteristics...
GeSn nMOSFETs were demonstrated. Key highlights of this work include 400 °C GeSn n+/p junction formation and GeSnO2 interfacial layer formation, and their integration. GeSn n+/p junction demonstrate a high doping concentration of 1020 cm−3 and a record high forward bias current of 320 A/cm2. Substantially improved SS is achieved in GeSn nMOSFET in comparison with Ge control, which indicates the high...
In this work, we report high mobility Ge0.958Sn0.042 p-MOSFETs where the GeSn surface was (NH4)2S passivated prior to gate dielectric deposition. Ge0.958Sn0.042 p-MOSFETs with (NH4)2S passivation demonstrate a peak effective mobility of 509 cm2/V·s and a subthreshold swing S of 220 mV/decade.
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