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This paper studies adhesive wafer bonding of 4 inches GaAs CCD device wafer with Optik glass for wafer level packaging. In this work, Benzocyclobutene (BCB) and dry film (DF) were proposed as the bonding material. Efforts were devoted to the warpage control. The relationship between the extent of warpage and bonding parameters, such as the bonding profile, the thickness of bonding material, supporting...
In this paper, a wafer-level package for a microwave transmission system has been implemented and tested. Three Monolithic Microwave Integrated Circuits (MMICs) packaged in one microwave system are first proposed. The packaged system consists of an up-converter, a drive amplifier and a power amplifier. All the modules are embedded in the cavities pre-etched in a low-resistivity silicon (Si) substrate...
Thin film multilayer technologies adapted from wafer level packaging offer a very promising approach for the implementation of integrated passive devices, which have become increasingly popular these years. In this paper, we present a novel fabrication technique which combines wafer level packaging (WLP) and Micro-Electro-Mechanic System (MEMS) technologies to prepare suspended inductors with high...
GaAs based image sensor has many advantages over its Si counterparts such as the ability to detect dim light and high sensitivity for higher saturated electron velocity and higher electron mobility. But little work has been reported on the packaging of GaAs image sensor particularly at wafer level. Since the full processed GaAs image sensor wafer is sensitive to high temperature or any plasma processes,...
A Si(111)–H surface was modified via a direct reaction between Si–H and 1-undecylenic acid (UA) under microwave irradiation to form molecular monolayers with terminal carboxyl groups. After esterifying carboxylic acid being esterified with N-hydroxysuccinimide (NHS), aminobutyl nitrilotriacetic acid (ANTA) was bound to the silicon surface through amidation (pH=8.0) between its primary amino group...
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