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In the present work we study the extent to which extrinsic chemical and field effect passivation can improve the overall electrical passivation quality of silicon dioxide on silicon. Here we demonstrate that, when optimally applied, extrinsic passivation can produce surface recombination velocities below 1.2cm/s in planar 1Ωcm n-type Si. This is largely due to the additional field effect passivation...
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