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We have proposed a novel etching gas C5F10O of which global warming potential would be less than 50, for the plasma etching of SiOCH. The etching was performed using a dual frequency capacitively coupled plasma (CCP). The high performances of a high etching rate and a high selectivity over resist films were obtained. The C5F10O gas produced many CF3+ ions which have a large etching yield due to its...
We have been investigated p-type microcrystalline Si/sub 1-x/C/sub x/ (/spl mu/c-SiC) films fabricated by rf plasma CVD methods with excitation frequencies of 13.56 MHz as well as 40.68 MHz. The /spl mu/c-SiC films were deposited with a use of a new carbon source of C/sub 2/H/sub 6/ gas at a low substrate temperature on a glass substrate. Differences in structural, optical and electrical properties...
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