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Silicon epitaxial growth on a 450 mm diameter silicon substrate and the related transport phenomena in a trichlorosilane‐hydrogen system were numerically evaluated. In order to minimize the gas species transport distance, the single‐wafer high‐speed rotation vertical epitaxial reactor was studied assuming the future conditions and geometry. The edge of the large diameter substrate moves very quickly...
The lowest temperature for initiating the film deposition was evaluated by in situ monitoring using a highly sensitive langasite crystal microbalance (LCM) in order to produce a thin boron doped silicon film using trichlorosilane gas and boron trichloride gas at low temperatures. The thin films of silicon, boron and boron‐doped silicon were individually formed from the trichlorosilane gas, boron trichloride...
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