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A removal, as far as possible, of the GaSb substrate is needed to optimize the quantum efficiency and the longevity, i.e., the maximum number of cool down cycles, of dual‐colour InAs/GaSb superlattice focal plane array detectors for the mid‐wavelength infrared atmospheric transmission window at 3‐5 µm. For this purpose, three different vertical detector structures have been investigated and are compared...
We present the InAs/GaSb type-II superlattice dual-color technology developed at Fraunhofer IAF. This includes insights into some of the test methodologies employed at various stages during the fabrication process, which ensure that the basic requirements for achieving high detector performance are met. Much effort is put in improving and monitoring the quality of the substrate and the epilayers....
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