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The thermal stability and crystallization characteristics of W-doped Sb3Te films have been studied systematically. It was found that W atoms presented in the form of amorphous content, which increased the crystallization temperature and crystalline resistance, sustained uniform single crystalline structure and refined their grain size of Sb3Te films. The optimized W20.1(Sb3Te)79.9 film exhibits higher...
In this paper, phase change characteristics of Sb-rich Ga–SbSe materials were systematically investigated for ultralong-retention and high-speed phase change memory (PCM). Sb-rich Ga–Sb–Se materials possess crystallization temperature higher than 225°C and activation energy of crystallization above 3.0eV, which leads to outstanding data retention ability in excess of 135°C for 10years. The film thickness...
The amorphous Ge 11.4 Te 86.4 Ga 2.2 chalcogenide thin films were prepared by thermal evaporation onto chemically cleaned glass substrates. Properties measurements include X-ray diffraction (XRD), Scanning electron microscopy (SEM), Differential scanning calorimetry (DSC), Four-point probe and VIS–NIR transmission spectra. The allowed indirect transition optical band gap and...
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