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Structural and electrical properties of undoped and doped α‐Ga2O3 thin films grown by pulsed laser deposition on m‐plane sapphire in a two‐step process are presented. A buffer layer of undoped α‐Ga2O3 is introduced below the electrically active thin film to improve the crystal quality and enable the stabilization of the α‐phase at lower substrate temperatures for sufficient dopant incorporation....
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