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In this study, the growth and photoluminescence (PL) properties of InSb/GaSb nano‐stripes grown by molecular beam epitaxy on (001) GaSb substrate are reported. In situ reflection high‐energy electron diffraction observation during InSb growth shows that the growth of InSb on GaSb surface is in Stranski–Krastanov mode and results in nano‐stripe formation. The obtained nano‐stripes have rectangular‐based...
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