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Synaptic Devices
With lithography‐free, directlaser‐writing‐controlled MoS2/MoS2−xOδ grain boundaries, synaptic devices fabricated by Kai Liu and co‐workers, as described in article number 2102435, exhibit short‐term and long‐term plasticity characteristics that are responsive to electric and light stimulation simultaneously; they also exhibit a low energy consumption that is over 40 times lower than...
Synaptic devices based on 2D‐layered materials have emerged as high‐efficiency electronic synapses and neurons for neuromorphic computing. Lateral 2D synaptic devices have the advantages of multiple functionalities by responding to diverse stimuli, but they consume large amounts of energy, far more than the human brain. Moreover, current lateral devices employ several mechanisms based on conductive...
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