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GaN-based ridge waveguides with very smooth and vertical sidewalls are fabricated with combined inductively coupled plasma (ICP) etching and chemical etching. Reduction in scattering loss is estimated to be 2 dB/mm at 1.55 μm.
Novel fabrication process of SiNx/SiO2 waveguide based on sidewall oxidation of patterned silicon substrate is proposed. The fabrication time of the lower SiO2 cladding is about one third of that of the conventional process.
Novel back-to-back uni-traveling-carrier photodiodes are proposed and demonstrated. High responsivity of 0.83 A/W and wide bandwidth over 40 GHz are realized simultaneously in mesa-structure photodiodes for the first time.
A novel back-illuminated mesa-structure back-to-back uni-traveling-carrier photodiode (UTC-PD) is proposed and realized. By stacking two UTC-PDs to form a PINIP structure, high responsivity, high output saturation power, and wide bandwidth are achieved simultaneously. The responsivity of a 24- -diameter device is as high as 0.86 A/W, and a 3-dB bandwidth up to 28.3 GHz is attained. The saturation...
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