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In this work terahertz (THz) electroluminescence of shallow impurities in AlGaN/GaN high electron mobility transitor (HEMT) structures are studied at temperatures above 80 K. The samples are excited with electric field pulses of up to 300 V cm−1 and duration of ms. The THz emission spectra are measured in vacuumed environment by means of infrared Fourier transform spectroscopy. Resonant 1s...
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