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Amorphous zinc tin oxides (a‐ZTO), which are stoichiometrically close to the Zn2SnO4 and ZnSnO3 phases, have been deposited using remote‐plasma reactive sputtering, and incorporated as the channel layers in thin film transistors (TFTs). The influence of tin composition and annealing temperatures on the structural and phase evolutions of the thin films, and the electrical performances of the TFTs...
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