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Nitrogen depth profiling in a high-k gate stack structure, SiON/HfO 2 /SiON/Si(001) was performed by high-resolution Rutherford backscattering spectroscopy (HRBS) in combination with angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The nitrogen depth profile is determined so that both the HRBS spectrum and the angular dependence of the XPS yield are reproduced. The obtained nitrogen...
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