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For the first time, we demonstrate stressor contact etch stop liner (sCESL) modulation of parasitics/external resistance in nonplanar devices. We report 17% saturation drive current enhancement in underlap doped cMOS FinFETs attributed to simultaneous lowering of RS/D via biaxial S/D stress and μo increase via effective uniaxial channel stress. Our observations imply that biaxial strain engineering...
We report on the promise of dual channel materials using FinFETs for high-performance CMOS for sub 22 nm technology node. We demonstrate pFinFETs with all SiGe channel formed by Germanium condensation onto a Silicon-On-Insulator carrier wafer (SiGeOI) followed by cMOS processing. The devices exhibit 3.6X hole mobility enhancement over Silicon (100) while allowing for VTH control with single high-k...
For the first time strain additivity on III-V using prototypical (100) GaAs n- and p-MOSFETs is studied via wafer bending experiments and piezoresistance coefficients are extracted and compared with those for Si and Ge MOSFETs. Further understanding of these results is obtained by using multi-valley conduction band model for n-MOS and performing k.p simulations for p-MOS. For GaAs n-MOSFET, uniaxial...
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